• 文献标题:   Graphene Field-Effect Transistor and Its Application for Electronic Sensing
  • 文献类型:   Review
  • 作  者:   ZHAN BB, LI C, YANG J, JENKINS G, HUANG W, DONG XC
  • 作者关键词:   graphene, fieldeffect transistor, sensing
  • 出版物名称:   SMALL
  • ISSN:   1613-6810 EI 1613-6829
  • 通讯作者地址:   Nanjing Univ Posts Telecommun
  • 被引频次:   107
  • DOI:   10.1002/smll.201400463
  • 出版年:   2014

▎ 摘  要

Graphene, because of its excellent mechanical, electrical, chemical, physical properties, sparked great interest to develop and extend its applications. Particularly, graphene based field-effect transistors (GFETs) present exciting and bright prospects for sensing applications due to their greatly higher sensitivity and stronger selectivity. This Review highlights a selection of important topics pertinent to GFETs and their application in electronic sensors. This article begins with a description of the fabrications and characterizations of GFETs, and then introduces the new developments in physical, chemical, and biological electronic detection using GFETs. Finally, several perspective and current challenges of GFETs development are presented, and some proposals are suggested for further development and exploration.