• 文献标题:   Adsorbate-Induced Defect Formation and Annihilation on Graphene and Single-Walled Carbon Nanotubes
  • 文献类型:   Article
  • 作  者:   TSETSERIS L, PANTELIDES ST
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF PHYSICAL CHEMISTRY B
  • ISSN:   1520-6106
  • 通讯作者地址:   Aristotle Univ Thessaloniki
  • 被引频次:   32
  • DOI:   10.1021/jp809228p
  • 出版年:   2009

▎ 摘  要

We used density functional theory calculations to probe the chemical reactivity of graphene and single-wall carbon nanotubes (CNTs) toward the small molecules O(2), H(2), N(2), C(2)H(2), CO, and CO(2), We found that there is a threshold CNT size below which C(2)H(2), and CO, typical feedstock precursors for CNT growth, become trapped in decorated hillock-like defects on the side walls of CNTs. We also found that O(2), H(2), and CO(2) can etch isolated C adatoms and C adatom pairs. These processes play a role not only in the growth of CNTs, but also in the postgrowth evolution of defects on CNTs through exposure to typical ambient gases.