• 文献标题:   Fabrication of a Graphene/ZnO based p-n junction device and its ultraviolet photoresponse properties
  • 文献类型:   Article, Proceedings Paper
  • 作  者:   KWON YT, KANG SO, CHEON JA, SONG Y, LEE JJ, CHOA YH
  • 作者关键词:   pdoped graphene, ntype zno, photoresponse charge transfer, work function
  • 出版物名称:   APPLIED SURFACE SCIENCE
  • ISSN:   0169-4332 EI 1873-5584
  • 通讯作者地址:   Hanyang Univ
  • 被引频次:   12
  • DOI:   10.1016/j.apsusc.2016.10.159
  • 出版年:   2017

▎ 摘  要

Graphene with a zero-bandgap energy is easily doped using a chemical dopant, and a shift upwards or downwards in the Fermi level is generated. Moreover, the integration of inorganic material into the doped graphene changes the physical and chemical properties of the material. For this purpose, we successfully fabricated a p-n junction device by depositing an n-typed ZnO layer on p-doped graphene and studied the ultraviolet (UV) photoresponse properties under a photocurrent (UV light on) and a dark current (UV light off). Two devices, lateral and vertical, were developed by alternating the thickness of the ZnO layer, and the photoresponse mechanisms were described on the basis of the contact potential difference. (C) 2016 Elsevier B.V.All rights reserved.