• 文献标题:   Negative Quantum Capacitance Induced by Midgap States in Single-layer Graphene
  • 文献类型:   Article
  • 作  者:   WANG L, WANG Y, CHEN XL, ZHU W, ZHU C, WU ZF, HAN Y, ZHANG MW, LI W, HE YH, XIONG W, LAW KT, SU DS, WANG N
  • 作者关键词:  
  • 出版物名称:   SCIENTIFIC REPORTS
  • ISSN:   2045-2322
  • 通讯作者地址:   Hong Kong Univ Sci Technol
  • 被引频次:   14
  • DOI:   10.1038/srep02041
  • 出版年:   2013

▎ 摘  要

We demonstrate that single-layer graphene (SLG) decorated with a high density of Ag adatoms displays the unconventional phenomenon of negative quantum capacitance. The Ag adatoms act as resonant impurities and form nearly dispersionless resonant impurity bands near the charge neutrality point (CNP). Resonant impurities quench the kinetic energy and drive the electrons to the Coulomb energy dominated regime with negative compressibility. In the absence of a magnetic field, negative quantum capacitance is observed near the CNP. In the quantum Hall regime, negative quantum capacitance behavior at several Landau level positions is displayed, which is associated with the quenching of kinetic energy by the formation of Landau levels. The negative quantum capacitance effect near the CNP is further enhanced in the presence of Landau levels due to the magnetic-field-enhanced Coulomb interactions.