• 文献标题:   The interaction of Xe and Xe plus K with graphene
  • 文献类型:   Article
  • 作  者:   BOSTWICK A, MCCHESNEY JL, OHTA T, EMTSEV KV, SEYLLER T, HORN K, ROTENBERG E
  • 作者关键词:   graphene, doped graphene, epitaxial graphene, raregas adsorption
  • 出版物名称:   JOURNAL OF ELECTRON SPECTROSCOPY RELATED PHENOMENA
  • ISSN:   0368-2048 EI 1873-2526
  • 通讯作者地址:   Univ Calif Berkeley
  • 被引频次:   2
  • DOI:   10.1016/j.elspec.2010.05.003
  • 出版年:   2011

▎ 摘  要

We have investigated the electronic properties of monolayer graphene with adsorbed layers of xenon or potassium, or a combination of the two. The formation of the first Xe layer is characterized by a dipole polarization which is quenched by a second Xe layer. By comparing K on Xe on graphene to K on bare graphene, we determine the K contribution to trigonal warping and mass renormalization due to electron-phonon coupling. The former is found to be small but significant, while the latter is shown to be negligible. Thus, previously determined values of electron-phonon coupling for K on graphene are shown to be intrinsic to doped graphene and not determined by the proximity of K ions to the graphene. Published by Elsevier B.V.