▎ 摘　　要

Carbon ions were implanted in a nickel thin film. After subsequent rapid thermal annealing, they segregated on the surface, forming a graphene layer. The dependence of graphene synthesis on process conditions, including the carbon implantation dose, RTA temperature, and time, were investigated. The graphene shows quality comparable to that of the best reported CVD graphene. It was also found that local growth of graphene through local implantation requires stringent control of the process chamber conditions in order to avoid growth of graphene on unimplanted regions.