▎ 摘　　要

To obtain few-layer graphene (FLG), we propose a new growth process based on gas-source molecular beam epitaxy, in which a cracked-ethanol source is employed. To show the feasibility of this growth process, we tried to homoepitaxially grow FLG on epitaxial graphene formed on a SiC substrate. The results of Raman scattering, transmission electron microscopy, and in situ X-ray photoelectron spectroscopy analyses prove that graphene was formed on the substrate, indicating that our approach is feasible for the formation of wafer-scale FLG. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim