▎ 摘　　要

A method of controllable doping by ion irradiation in reduced graphene oxide (RGO) is presented, and the threshold voltage of the RGO-based field-effect transistor can be finely tuned in the range from more than 30 V to about -20 V using this approach. Evidence of doping was also provided by Raman spectroscopy and Fourier transform infrared spectroscopy.