• 文献标题:   Reducing flicker noise in chemical vapor deposition graphene field-effect transistors
  • 文献类型:   Article
  • 作  者:   ARNOLD HN, SANGWAN VK, SCHMUCKER SW, CRESS CD, LUCK KA, FRIEDMAN AL, ROBINSON JT, MARKS TJ, HERSAM MC
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:   Northwestern Univ
  • 被引频次:   11
  • DOI:   10.1063/1.4942468
  • 出版年:   2016

▎ 摘  要

Single-layer graphene derived from chemical vapor deposition (CVD) holds promise for scalable radio frequency (RF) electronic applications. However, prevalent low-frequency flicker noise (1/f noise) in CVD graphene field-effect transistors is often up-converted to higher frequencies, thus limiting RF device performance. Here, we achieve an order of magnitude reduction in 1/f noise in field-effect transistors based on CVD graphene transferred onto silicon oxide substrates by utilizing a processing protocol that avoids aqueous chemistry after graphene transfer. Correspondingly, the normalized noise spectral density (10(-7)-10(-8) mu m(2) Hz(-1)) and noise amplitude (4 x 10(-8)-10(-7)) in these devices are comparable to those of exfoliated and suspended graphene. We attribute the reduction in 1/f noise to a decrease in the contribution of fluctuations in the scattering cross-sections of carriers arising from dynamic redistribution of interfacial disorder. (C) 2016 AIP Publishing LLC.