▎ 摘　　要

We report measurements of disordered graphene probed by both a high electric field and a high magnetic field. By applying a high source-drain voltage, V-sd, we are able to study the current-voltage relation I-V-sd of our device. With increasing Vsd, a crossover from the linear I-Vsd regime to the non-linear one, and eventually to activationless-hopping transport occurs. In the activationless-hopping regime, the importance of Coulomb interactions between charged carriers is demonstrated. Moreover, we show that delocalization of carriers which are strongly localized at low T and at small Vsd occurs in the presence of high electric field and perpendicular magnetic field.