• 文献标题:   Strong Proximity Josephson Coupling in Vertically Stacked NbSe2 - Graphene-NbSe2 van der Waals Junctions
  • 文献类型:   Article
  • 作  者:   KIM M, PARK GH, LEE J, LEE JH, PARK J, LEE H, LEE GH, LEE HJ
  • 作者关键词:   graphene, nbse2, twodimensional material, heterostructure, josephson junction
  • 出版物名称:   NANO LETTERS
  • ISSN:   1530-6984 EI 1530-6992
  • 通讯作者地址:   Pohang Univ Sci Technol
  • 被引频次:   9
  • DOI:   10.1021/acs.nanolett.7b02707
  • 出版年:   2017

▎ 摘  要

A layered two-dimensional superconducting material 2H-NbSe2 is used to build a van der Waals heterostructure, where a proximity-coupled superconducting order can be induced in the interfacing materials. Vertically stacked NbSe2-graphene-NbSe2 is fabricated using van der Waals interlayer coupling, producing defect-free contacts with a high interfacial transparency. The atomically thin graphene layer allows the formation of a highly coherent proximity Josephson coupling between the two NbSe2 flakes. The temperature dependence of the junction critical current (I-c) reveals short and ballistic Josephson coupling characteristics that agree with theoretical prediction. The strong Josephson coupling is confirmed by a large junction critical current density of 1.6 x 10(4) A/cm(2), multiple Andreev reflections in the subgap structure of the differential conductance, and a magnetic-field modulation of Ic. This is the first demonstration of strongly proximity-coupled Josephson junctions with extremely clean interfaces in a dry-transfer-stacked van der Waals heterostructure.