• 文献标题:   Epitaxial Graphene Transistors: Enhancing Performance via Hydrogen Intercalation
  • 文献类型:   Article
  • 作  者:   ROBINSON JA, HOLLANDER M, LABELLA M, TRUMBULL KA, CAVALERO R, SNYDER DW
  • 作者关键词:   epitaxial graphene, hydrogenation, transistor, cutoff frequency, carrier mobility, buffer layer
  • 出版物名称:   NANO LETTERS
  • ISSN:   1530-6984 EI 1530-6992
  • 通讯作者地址:   Penn State Univ
  • 被引频次:   111
  • DOI:   10.1021/nl2019855
  • 出版年:   2011

▎ 摘  要

We directly demonstrate the importance of buffer elimination at the graphene/SiC(0001) interface for high frequency applications. Upon successful buffer elimination, carrier mobility increases from an average of 800 cm(2)/(V s) to >2000 cm(2)/(V s). Additionally, graphene transistor current saturation increases from 750 to >1300 mA/mm, and transconductance improves from 175 mS/mm to >400 mS. Finally, we report a 10x improvement in the extrinsic current gain response of graphene transistors with optimal extrinsic current-gain cutoff frequencies of 24 GHz.