▎ 摘　　要

A method for realizing voltage-controlled conductance switching using single layer graphene is proposed and numerically studied and presented. The ultrahigh conductance On/Off ratio (G(On)/G(Off)) is achieved through the "closing/opening" of an energy bandgap in single layer graphene. The G(On)/G(Off) reaches as high as similar to 152 when the bandgap is of only similar to 12 meV (B = 3) for the simulated device configuration. Furthermore, the G(On)/G(Off) ratio increases parabolically with the increasing of the product of U and d (i.e. U*d) and increases exponentially with the increasing of the product of B and b (i.e. Bib). In addition, the G(On)/G(Off) ratio increases with the increasing of the unit cell number N of the device. These features of merit provide ways for the optimization of the performance and properties of the switch.