▎ 摘　　要

Based on the distinct response of valley transport in graphene under the uniform strain, magnetic barrier, and electrostatic barrier manipulation, completely single-valley forward transport has been theoretically demonstrated by aligning deliberately the field profile of magnetic barrier and strain field. Further imposing electrostatic engineering, the receiving single-valley transport can be flexibly tuned to adapt much realistic field modulation, improve its ability to resist the temperature-induced thermal smooth, and even turn on or off this single-valley transport mode, displaying the appealing features for valleytronic device application.(C) 2013 AIP Publishing LLC.