▎ 摘　　要

This report details the controllable doping of graphene through post-growth plasma treatments. Defects are controllably introduced into the lattice using argon plasma, following this sample are exposed to ammonia/hydrogen plasma. During this nitrogen atoms get incorporated causing partial restoration of the graphene lattice. The damage levels are characterised by Raman and X-ray photoelectron spectroscopies. The incorporation of nitrogen into the graphene lattice provides significant n-doping. This is confirmed by the fabrication of graphene field-effect transistors which show clear n-type behaviour and mobilities not significantly less than those of pristine graphene. Thus this work demonstrates the viability of plasma treatments to reliably dope graphene.