▎ 摘　　要

A simulation study of the graphene base heterojunction transistor (GBHT) is presented based on a novel realistic graphene-Si interface model, calibrated on the experimental graphene-Si Schottky diodes, whose current-voltage-temperature characteristics are well reproduced. The GBHT simulations predict f(T) in the tens-of-gigahertz range and confirm the need for an improved quality of the graphene interface for the terahertz operation to be reached.