▎ 摘　　要

The current work presents the fabrication and characterization of graphene-silicon heterojunctions with various contact areas. First, we transferred the graphene from copper to Si and SiO2 substrates using Electrochemical Delamination and then we processed and characterized the transferred graphene. Second, we manufactured graphene-Si heterojunctions with several contact areas made by opening windows of various sizes in Si. Microscopy and spectroscopy analysis confirms the successful graphene transfer which is also revealed by a relative high carrier mobility of 2327 cm(2)/V.s measured in a field effect transistor configuration. We test the quality of graphene-Si Schottky contacts by measuring the I-V characteristics of heterojunctions established within Si windows with linear sizes ranging from up to 70 mu m to down to 6 mu m. All our structures exhibit rectifying I-V curves behavior from which we were able to extract junction parameters like the ideality factor, the barrier height and the series resistance. This work provides a route to engineer graphene-based devices like Schottky diodes and field effect transistors (FETs) by relatively simple procedures.