• 文献标题:   Electron-phonon scattering and in-plane electric conductivity in twisted bilayer graphene
  • 文献类型:   Article
  • 作  者:   RAY N, FLEISCHMANN M, WECKBECKER D, SHARMA S, PANKRATOV O, SHALLCROSS S
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW B
  • ISSN:   2469-9950 EI 2469-9969
  • 通讯作者地址:   Univ Erlangen Nurnberg
  • 被引频次:   6
  • DOI:   10.1103/PhysRevB.94.245403
  • 出版年:   2016

▎ 摘  要

We have surveyed the in-plane transport properties of the graphene twist bilayer using (i) a low-energy effective Hamiltonian for the underlying electronic structure, (ii) an isotropic elastic phonon model, and (iii) the linear Boltzmann equation for elastic electron-phonon scattering. We find that transport in the twist bilayer is profoundly sensitive to the rotation angle of the constituent layers. Similar to the electronic structure of the twist bilayer, the transport is qualitatively different in three distinct angle regimes. At large angles (theta >approximate to 10 degrees) and at temperatures below an interlayer Bloch-Gruuneisen temperature of approximate to 10 K, the conductivity is independent of the twist angle, i.e., the layers are fully decoupled. Above this temperature the layers, even though decoupled in the ground state, are recoupled by electron-phonon scattering and the transport is different both from single-layer graphene as well as the Bernal bilayer. In the small-angle regime theta