▎ 摘　　要

Two-dimensional (2D) materials have been utilized to design flexible field-effect transistors (FETs) with promising performance. However, flexible FETs still face challenges with poor switching features and ultra-low drive current. In this paper, a facile and repeatable large-area integration process is presented for inkjet-printed FETs with 2D materials active channels and PI films as gate dielectrics. The MoS2FETs reported here exhibitn-type channel feature with an outstanding average subthreshold swing of 75 mV/dec, an on-state/off-state current ratio of 10(4), and on-state current up to 10 mu A at a power supply voltage of 3.0 V. Besides, MoS2-rGO FETs also exhibitn-type semiconductor features with good electrical properties by the inkjet-printing technology.