▎ 摘　　要

One dimensional band structure limit is applied on monolayer graphene nanoribbon homo-junction. The parabolic band energy approximation on graphene nanoribbon in low energy limit is assumed which means carrier movement can be presumed as a ballistic transport. Two graphene nanoribbon with different width are projected as metallic and semiconducting components of a homo-junction schottky diode. Finally analytical model of junction current-voltage (I-V), graphene nanoribbon width effects on carrier transport also physical parameters, such as drain voltage, gate voltage are presented. Comparison study between presented model and conventional diodes indicates smaller effective turn-on voltage of the graphene nanoribbon schottky diode.