▎ 摘　　要

Demonstration of a transparent InGaZnO thin film transistor using a graphene composite as the transparent source/drain electrode is presented. Graphene growth was confirmed by Raman spectroscopy, showing all associated peaks at 1350, 1580, and 2700 cm(-1). The graphene composite showed a sheet resistance reduction of 15% while losing only 1.2% transparency when compared to the reference indium-tin oxide only electrode. Device characteristics of the composite device were on similar levels to those of the reference indium-tin oxide only device reaching a peak saturation mobility of nearly 30 cm(2) v(-1) s(-1) indicating that graphene integration did not degrade InGaZnO transistor performance. (C) 2010 American Institute of Physics. [doi:10.1063/1.3490245]