▎ 摘　　要

We review the angle-resolved photoemission spectroscopy (ARPES) technique and its applications to epitaxially grown graphenes. In particular we discuss the extraction of symmetry-breaking factors associated with superlattice formation due to substrate lattice mismatch. For UHV grown graphene on SiC, which has a quasi-13 x 13 superlattice (with respect to graphene), no coupling vectors exist to break the chiral symmetry, and a gap at E-D is not observed. For graphene on Ir(111), lattice mismatch induces a well-known Moire pattern with 10 x 10 (relative to graphene) symmetry. Despite the fact that chirality should be preserved under this symmetry, energy gaps are found at the main as well as the mini-Dirac crossings. A simple tight binding model that neglects chirality can explain the observed miniband spectrum in graphene on Ir(111). (C) 2015 Elsevier B.V. All rights reserved.