• 文献标题:   Effect of p-pairing symmetry on tunneling conductance in a gapped graphene-superconductor junction
  • 文献类型:   Article
  • 作  者:   GOUDARZI H, SEDGHI H, KHEZERLOU M
  • 作者关键词:  
  • 出版物名称:   PHYSICA ELOWDIMENSIONAL SYSTEMS NANOSTRUCTURES
  • ISSN:   1386-9477 EI 1873-1759
  • 通讯作者地址:   Urmia Univ
  • 被引频次:   4
  • DOI:   10.1016/j.physe.2011.02.016
  • 出版年:   2011

▎ 摘  要

We study the transport properties of a gapped graphene-based normal metal/insulator/p-wave superconductor junction in the limit of a thin barrier. In this work, we aim to study the influence of three types of p-wave superconductivity in tunneling conductance spectra for p(x), p(y) and p(x) + ip(y)-pairing symmetry. In particular, the normal conductance is obtained in terms of the bias voltage, eV, the energy gap of graphene, mv(F)(2), and also the insulator electrostatic potential, V-0, taking realizable experimental data for physical parameters in structure. It is shown that the conductance versus bias voltage for p(x)-symmetry taking into account the superconductor electrostatic potential, U-0, exhibits a similar feature as for p(x) + p(y)-symmetry. We see that, the step functional behavior of charge carriers depends on the type of p-pair coupling, as similar behavior has been observed in d-wave superconductivity in the same structure. (C) 2011 Elsevier B.V. All rights reserved.