• 文献标题:   Plasma-assisted growth and nitrogen doping of graphene films
  • 文献类型:   Article
  • 作  者:   WANG CD, YUEN MF, NG TW, JHA SK, LU ZZ, KWOK SY, WONG TL, YANG X, LEE CS, LEE ST, ZHANG WJ
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:   City Univ Hong Kong
  • 被引频次:   28
  • DOI:   10.1063/1.4729823
  • 出版年:   2012

▎ 摘  要

Microwave plasmas were employed to synthesize single- or double-layer graphene sheets on copper foils using a solid carbon source, polymethylmetacrylate. The utilization of reactive plasmas enables the graphene growth at reduced temperatures as compared to conventional thermal chemical vapor deposition processes. The effects of substrate temperature on graphene quality were studied based on Raman analysis, and a reduction of defects at elevated temperature was observed. Moreover, a facile approach to incorporate nitrogen into graphene by plasma treatment in a nitrogen/hydrogen gas mixture was demonstrated, and most of the nitrogen atoms were verified to be pyridinelike in carbon network. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4729823]