• 文献标题:   Quantum Hall effect in polycrystalline graphene: The role of grain boundaries
  • 文献类型:   Article
  • 作  者:   CUMMINGS AW, CRESTI A, ROCHE S
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW B
  • ISSN:   2469-9950 EI 2469-9969
  • 通讯作者地址:   ICN2
  • 被引频次:   13
  • DOI:   10.1103/PhysRevB.90.161401
  • 出版年:   2014

▎ 摘  要

We use numerical simulations to predict peculiar magnetotransport fingerprints in polycrystalline graphene, driven by the presence of grain boundaries of varying size and orientation. The formation of Landau levels is shown to be restricted by the polycrystalline morphology, requiring the magnetic length to be smaller than the average grain radius. The nature of localization is also found to be unusual, with strongly localized states at the center of Landau levels (including the usually highly robust zero-energy state) and extended electronic states lying between Landau levels. These extended states percolate along the network of grain boundaries, resulting in a finite value for the bulk dissipative conductivity and suppression of the quantized Hall conductance. Such breakdown of the quantum Hall regime provoked by extended structural defects is also illustrated through two-terminal Landauer-Buttiker conductance calculations, indicating how a single grain boundary induces cross linking between edge states lying at opposite sides of a ribbon geometry.