• 文献标题:   Graphene Nanoribbon Devices Produced by Oxidative Unzipping of Carbon Nanotubes
  • 文献类型:   Article
  • 作  者:   SINITSKII A, DIMIEV A, KOSYNKIN DV, TOUR JM
  • 作者关键词:   graphene, graphene nanoribbon, carbon nanotube, fieldeffect transistor, nonvolatile memorie
  • 出版物名称:   ACS NANO
  • ISSN:   1936-0851 EI 1936-086X
  • 通讯作者地址:   Rice Univ
  • 被引频次:   84
  • DOI:   10.1021/nn101019h
  • 出版年:   2010

▎ 摘  要

We demonstrate that graphene nanoribbons (GNRs), produced by the chemical unzipping of carbon nanotubes, can be conveniently used from solution to hand-paint unidirectional arrays of GNRs atop silicon oxide. Through this simple alignment technique, numerous GNR-based devices, including field effect transistors, sensors, and memories can be easily fabricated on a single chip, and then used to generate statistically relevant device assessments. Such studies immediately give insights into, for example, multilayering properties on conductance, the profound effects that atmospheric adsorbates have upon the transfer characteristics of graphene, and other phenomena affecting the performance of GNR devices.