• 文献标题:   Fabrication of quantum-dot devices in graphene
  • 文献类型:   Article
  • 作  者:   MORIYAMA S, MORITA Y, WATANABE E, TSUYA D, UJI S, SHIMIZU M, ISHIBASHI K
  • 作者关键词:   graphene, quantum dot, double quantum dot, singleelectron transport
  • 出版物名称:   SCIENCE TECHNOLOGY OF ADVANCED MATERIALS
  • ISSN:   1468-6996
  • 通讯作者地址:   Natl Inst Mat Sci
  • 被引频次:   11
  • DOI:   10.1088/1468-6996/11/5/054601
  • 出版年:   2010

▎ 摘  要

We describe our recent experimental results on the fabrication of quantum-dot devices in a graphene-based two-dimensional system. Graphene samples were prepared by micromechanical cleavage of graphite crystals on a SiO2/Si substrate. We performed micro-Raman spectroscopy measurements to determine the number of layers of graphene flakes during the device fabrication process. By applying a nanofabrication process to the identified graphene flakes, we prepared a double-quantum-dot device structure comprising two lateral quantum dots coupled in series. Measurements of low-temperature electrical transport show the device to be a series-coupled double-dot system with varied interdot tunnel coupling, the strength of which changes continuously and non-monotonically as a function of gate voltage.