▎ 摘　　要

Nitrogen ions doped TiO2 nanotubes (N-TNTs) were synthesized via ion implantation and anodization. Graphene was deposited on the surface of N-TNTs during anodization. After being annealed at the temperature of 450 degrees C, the samples were determined using FE-SEM, XRD, XPS, and UV-Vis DRS. The photoelectric performance of the samples was confirmed by transient photocurrent. The results indicated that morphology and structure of N-TNTs were improved due to ion implantation. Because of the combustion of deposited graphene during the annealing process, the degree of crystallinity of N-TNTs was improved, and the contents of substitutional N increased. The TNTs modified by ion implantation and combustion of graphene exhibited the best photoelectric performance. (C) 2018 Elsevier B.V. All rights reserved.