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  • 文献标题:   Effects of doping and biaxial strain on the electronic properties of GaN/graphene/WS(2)trilayer vdW heterostructure (vol 52, pg 631, 2020)
  • 文献类型:   Correction
  • 作　　者:   ZHENG JS, LI EL, CUI Z, MA DM, WANG XL
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF MATERIALS SCIENCE
  • ISSN:   0022-2461 EI 1573-4803
  • 通讯作者地址:   Xian Univ Technol
  • 被引频次:   0
  • DOI:   10.1007/s10853-020-04903-0 EA JUN 2020
  • 出版年:   2020

▎ 摘　　要

In the original article, Fig. 3 was incorrect. The original article has been updated to display the corrected figure.