▎ 摘　　要

Here we present a feasible way to fabricate a high-performance graphene phototransistor functionalized with Poly(3-hexylthiophene) (P3HT)/graphene bulk heterojunction by solution processing, which possesses the advantages of the high carrier mobility of graphene and the high visible light absorption of P3HT. The hole field-effect mobility for the device was 3.8 cm(2)V(-1)s(-1) at room temperature. The photoresponsivity, external quantum efficiency and detectivity were 12 A/W, 3 x 10(3) % and 1.6 x 10(6) Jones at a illumination irradiance of 15 mW/cm(2) respectively. The phototransistor exhibited sensitive photo response with a rise time of 168 ms and a decay time of 121 ms.