▎ 摘　　要

Epitaxial graphene is promising material for future graphene-based applications including high frequency devices and chemical/biological sensors. Modifying the surface chemistry of graphene allows one to control its properties and thus provides a promising route towards further broadening the device application space for this unique material. Herein, we demonstrate the use of electron beam generated plasmas as a route towards controlled oxygen doping of epitaxial graphene. X-ray photoelectron spectroscopy, Raman spectroscopy and electrical measurements are used to track the oxygen incorporation and its influence on the structural and electrical properties of epitaxial graphene. (C) 2013 Elsevier B.V. All rights reserved.