▎ 摘　　要

In this study, a light sensor is fabricated based on photosystem I (PSI) and a graphene field-effect transistor (FET) that detects light at a high quantum yield under ambient conditions. We immobilized PSI on a micrometer- sized graphene FET using Au nanoparticles (AuNPs) and measured the I-V characteristics of the modified graphene FET before and after light irradiation. The source-drain current (I-sd) increased upon illumination, exhibiting a photoresponsivity of 4.8 x 10(2) A W-1, and the charge neutrality point of graphene shifted by -12 mV. This system represents the first successful photosensing system based on proteins and a solution-gated graphene FET. The probable mechanism of this negative shift can be explained by the increase in negative charge carriers in graphene induced by a hole trap in the AuNP resulting from electron transfer from the AuNP to PSI. Photoresponses were only observed in the presence of two surface-active agents, n-hexyltrimethylammonium bromide and sodium dodecylbenzenesulfonate, because they caused the formation of a hydrophobic environment on the surface of the graphene. The lipid layer of these agents caused dissociation of ascorbate ions from the graphene sheet, thereby expanding the Debye screening length of the electrolyte solution. The hydrophobic environment above graphene also enhanced hole storage in the AuNP through electron transfer from the AuNP to PSI.