▎ 摘　　要

Graphene is a promising candidate for optical and electronic applications due to its outstanding electronic, optical and thermal properties. The combination of graphene with different materials, such as metals or metal oxides, realizes a smoother surface and lower contact resistance than single-layer graphene. Atomic layer deposition (ALD) is based on atomic level manipulation of gaseous phase reactants, which can be employed to fabricate high-performance graphene composites for advanced applications. However, ALD-assisted graphene functionalization faces numerous challenges, such as preferred growth on wrinkles, grain boundaries and defect sites due to the absence of abundant reactive sites on graphene surface. Herein, we summarize recent work on ALD-based graphene modification from the process and application viewpoints. In particular, mechanistic insights into the ALD process parameters and the influence of ALD conditions on film quality are discussed in detail. Moreover, a brief overview of several applications of ALD-assisted graphene-based electronic devices is presented.