▎ 摘　　要

We report on few-layer graphene synthesis on fused silica, with the help of pre-deposited copper films with thickness of few hundred nanometers, by using chemical vapor deposition technique. Depending on the copper film thickness, the deposited graphene samples on copper/silica interface were either micron sized graphene flakes or uniform graphene films of a sub-millimeter width. The quality of graphene grown beneath the pre-deposited copper film was found to be comparable with that of graphene grown on bulk copper. The developed technique opens new route towards the space-selective CVD graphene growth on dielectric substrates. (C) 2011 Elsevier Ltd. All rights reserved.