• 文献标题:   Low-Temperature Reduction of Graphene Oxide: Electrical Conductance and Scanning Kelvin Probe Force Microscopy
  • 文献类型:   Article
  • 作  者:   SLOBODIAN OM, LYTVYN PM, NIKOLENKO AS, NASEKA VM, KHYZHUN OY, VASIN AV, SEVOSTIANOV SV, NAZAROV AN
  • 作者关键词:   graphene oxide, reduced graphene oxide, electrical resistivity, atomic force microscopy, scanning kelvin probe force microscopy, raman spectroscopy, ftir spectroscopy
  • 出版物名称:   NANOSCALE RESEARCH LETTERS
  • ISSN:   1931-7573 EI 1556-276X
  • 通讯作者地址:   Natl Tech Univ Ukraine Igor Sikorsky KPI
  • 被引频次:   7
  • DOI:   10.1186/s11671-018-2536-z
  • 出版年:   2018

▎ 摘  要

Graphene oxide (GO) films were formed by drop-casting method and were studied by FIT spectroscopy, micro-Raman spectroscopy (mRS), X-ray photoelectron spectroscopy (XPS), four-points probe method, atomic force microscopy (AFM), and scanning Kelvin probe force (SKPFM) microscopy after low-temperature annealing at ambient conditions. It was shown that in temperature range from 50 to 250 degrees C the electrical resistivity of the GO films decreases by seven orders of magnitude and is governed by two processes with activation energies of 622 and 1.65 eV, respectively. It was shown that the first process is mainly associated with water and OH groups desorption reducing the thickness of the film by 35% and causing the resistivity decrease by five orders of magnitude. The corresponding activation energy is the effective value determined by desorption and electrical connection of GO flakes from different layers. The second process is mainly associated with desorption of oxygen epoxy and alkoxy groups connected with carbon located in the basal plane of GO. AFM and SKPFM methods showed that during the second process, first, the surface of GO plane is destroyed forming nanostructured surface with low work function and then at higher temperature a flat carbon plane is formed that results in an increase of the work function of reduced GO.