• 文献标题:   Progress of terahertz devices based on graphene
  • 文献类型:   Article
  • 作  者:   FENG W, ZHANG R, CAO JC
  • 作者关键词:   terahertz, graphene, terahertz laser, terahertz detector
  • 出版物名称:   ACTA PHYSICA SINICA
  • ISSN:   1000-3290
  • 通讯作者地址:   Chinese Acad Sci
  • 被引频次:   6
  • DOI:   10.7498/aps.64.229501
  • 出版年:   2015

▎ 摘  要

Graphene has unique electronic properties stemming from a linear gapless carrier energy spectrum, and has dominant advantages in the research of devices such as lasers, detectors and modulators in terahertz region due to its tunable energy gap and extremely high carrier mobility. In this review, we summarize its latest progress in applications of terahertz devices such as lasers, detectors and modulators. Terahertz lasers based on graphene can reach a gain as high as 10(4) cm(-1), and terahertz detectors with different structures such as a bilayer graphene field-effect transistor with top gate and buried gate can achieve NEP (noise equivalent power) similar to nW/root Hz. Graphene terahertz modulators, which are equipped with transmission configuration and reflection configuration, can have a very high modulation depth. These results may be helpful for developing the high-efficiency graphene terahertz devices.