▎ 摘　　要

This article reports the growth of high-quality AlN films on graphene. The graphene films were synthesized by CVD and then transferred onto silicon substrates. Epitaxial aluminum nitride films were then deposited by DC magnetron sputtering onto intermediate graphene layer readily transferred onto the silicon substrate. The quality and structural characteristics of the graphene and AlN films were carefully inspected. Highly c-axis-oriented AN crystal structures are observed via XRD patterns.