▎ 摘　　要

We report the catalyst-free growth of InAs/InxGa1 (-) As-x coaxial nanorod heterostructures on large-area graphene layers using molecular beam epitaxy and our investigation of the chemical composition and crystal structure of these heterostructures using electron microscopy. The graphene layers used as the substrate were prepared by chemical vapor deposition and transferred onto SiO2/Si substrates. InAs nanorods and their heterostructures were grown vertically on the graphene layers; electron microscopy images revealed uniform distributions for their diameter, length and density. Cross-sectional electron microscopy images showed that InxGa1 - xAs layers, having uniform composition, coated heteroepitaxially the entire surface of the InAs nanorods, without interfacial layers or structural defects. The catalyst-free growth mechanism of InAs nanorods on graphene was investigated using in situ reflection high-energy electron diffraction.