▎ 摘　　要

In this letter, we present dual-gate Bernal-stacked bilayer graphene FETs which are used for gate-pumped resistive mixers. The results show that the conversion loss improves when the device on/off ratio increases. At 2 GHz, a record conversion loss of 12.7 dB has been obtained from 0.16 mu m device among graphene resistive mixers. Furthermore, more than 10 dB change of conversion loss has been obtained by adjusting the electric displacement field by dual-gate Voltages. Finally, the high-temperature characteristics of this type of graphene mixer exhibit excellent thermal stability with only 2 dB degradation in conversion loss from 300 to 380 K. This result shows that the Bernal-stacked bilayer graphene mixer is promising for low-loss and high-temperature radio frequency circuit applications.