• 文献标题:   Kinetics of Graphene Formation on Rh(111) Investigated by In Situ Scanning Tunneling Microscopy
  • 文献类型:   Article
  • 作  者:   DONG GC, FRENKEN JWM
  • 作者关键词:   graphene, scanning tunneling microscopy, surface kinetic, chemical vapor deposition
  • 出版物名称:   ACS NANO
  • ISSN:   1936-0851
  • 通讯作者地址:   Leiden Univ
  • 被引频次:   21
  • DOI:   10.1021/nn402229t
  • 出版年:   2013

▎ 摘  要

In situ scanning tunneling microscopy observations of, graphene formation on Rh(111) show that the moire pattern between the lattices of the overlayer and substrate has a decisive influence on the growth. The process is modulated in the large unit cells of the moire pattern. We distinguish two steps: the addition of a unit cell that introduces one or more new kinks and the addition of further unit cells that merely advance the position of an existing kink. Kink creation is the rate-limiting step, with kink creation at small-angle, concave corners in the graphene overlayer exhibiting the lower barrier.