• 文献标题:   InGaN-Based p-i-n Solar Cells with Graphene Electrodes
  • 文献类型:   Article
  • 作  者:   SHIM JP, CHOE M, JEON SR, SEO D, LEE T, LEE DS
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS EXPRESS
  • ISSN:   1882-0778
  • 通讯作者地址:   Gwangju Inst Sci Technol
  • 被引频次:   30
  • DOI:   10.1143/APEX.4.052302
  • 出版年:   2011

▎ 摘  要

InGaN-based p-i-n solar cells with graphene electrodes were fabricated and compared with solar cells using indium tin oxide (ITO) electrodes. In particular, we analyzed the properties of graphene film by means of high-resolution transmission electron microscopic (HRTEM) and Raman spectroscopy, also comparing optical properties with those of ITO, conventionally used as transparent electrodes. The solar cells using graphene revealed a short circuit current density of 0.83 mA/cm(2), an open circuit voltage of 2.0 V, a fill factor of 75.2%, and conversion efficiency of 1.2%, comparable to the performance of solar cells using ITO. (C) 2011 The Japan Society of Applied Physics