• 文献标题:   Single vacancy defects diffusion at the initial stage of graphene growth: A first-principles study
  • 文献类型:   Article
  • 作  者:   DU HB, JIA Y, SUN Q, GUO ZX
  • 作者关键词:   graphene, single vacancy defect, migration, firstprinciples study
  • 出版物名称:   PHYSICS LETTERS A
  • ISSN:   0375-9601 EI 1873-2429
  • 通讯作者地址:   Xian Technol Univ
  • 被引频次:   1
  • DOI:   10.1016/j.physleta.2015.02.030
  • 出版年:   2015

▎ 摘  要

The migration of a single vacancy (SV) defect in graphene fragment (GF) has been investigated by density functional theory (DFT). The results revealed that a single vacancy defect is easy to migrate to the GF edge. The interaction between an SV and a five-numbered ring at the edge results in two neighboring five-membered rings finally, while the interaction between an SV and a seven-membered ring defect at the edge of the GF leads to a five-numbered ring and a neighbor seven-numbered ring. Our findings shed light upon understanding of the growth process of the graphene grain boundary. (C) 2015 Elsevier B.V. All rights reserved.