▎ 摘　　要

We have synthesized poly(N-vinylcarbazole) (PVK) by using graphene oxide (GO) as photo-initiator and obtained the composite materials of PVK grown on GO nanosheets for fabricating the nonvolatile resistance switching memory devices. The structures of the hybrid composite materials were analyzed by using transmission electron microscopy, atomic force microscopy, Fourier transform infrared spectroscopy and C-13-NMR spectroscopy. The film devices with the structure of Al/PVK-GO/PEDOT: PSS/ITO have been measured for the memory effects. The new devices exhibit the nonvolatile resistance switching effect with the ON/OFF current ratio as high as 10(4) at a read voltage of 1.0 V. Both the low resistance ON state and the high- resistance OFF state retain stable under a constant voltage stress for 10(4) s. The resistance-temperature dependence and current-voltage model studies are carried out for both OFF-state and ON-state. The resistance of the OFF state shows negative temperature dependence, indicating a typical semiconductor property. The resistance of the ON state increases with an increase in temperature, indicating a metallic behavior.