• 文献标题:   Ordered and ultrathin reduced graphene oxide LB films as hole injection layers for organic light-emitting diode
  • 文献类型:   Article
  • 作  者:   YANG YJ, YANG XJ, YANG WY, LI SB, XU JH, JIANG YD
  • 作者关键词:   reduced graphene oxide, conducting polymer, lb film, oled, hole injection layer
  • 出版物名称:   NANOSCALE RESEARCH LETTERS
  • ISSN:   1931-7573 EI 1556-276X
  • 通讯作者地址:   Univ Elect Sci Technol China
  • 被引频次:   16
  • DOI:   10.1186/1556-276X-9-537
  • 出版年:   2014

▎ 摘  要

In this paper, we demonstrated the utilization of reduced graphene oxide (RGO) Langmuir-Blodgett (LB) films as high performance hole injection layer in organic light-emitting diode (OLED). By using LB technique, the well-ordered and thickness-controlled RGO sheets are incorporated between the organic active layer and the transparent conducting indium tin oxide (ITO), leading to an increase of recombination between electrons and holes. Due to the dramatic increase of hole carrier injection efficiency in RGO LB layer, the device luminance performance is greatly enhanced comparable to devices fabricated with spin-coating RGO and a commercial conducting polymer PEDOT:PSS as the hole transport layer. Furthermore, our results indicate that RGO LB films could be an excellent alternative to commercial PEDOT:PSS as the effective hole transport and electron blocking layer in light-emitting diode devices.