▎ 摘　　要

Two-dimensional graphene is considered potent candidate for the development of spintronics technology. Present work reports study of graphene-based spin-Field Effect Transistors. (s-FET) of two types namely, Top-Gated s-FET and Back-Gated s-FET. The Ohmic contact behavior was analyzed as Co-Graphene nanosheets (CGNs) used as ferromagnetic electrode for both types of s-FETs. The magnetoresistance (MR) study is conducted for both devices as a function of temperature and gate voltage. Study shows that MR monotonically reduces as temperature increases. For greater insight into about the functioning of device, spin-polarization values were estimated at different temperatures. Switching action in both the devices was analyzed and finally it is found that Top-Gated Type s-FET shows appropriate switching action.