文献标题: Facile preparation of an n-type reduced graphene oxide field effect transistor at room temperature
文献类型: Article
作 者: WANG LY, PARK Y, CUI P, BAK S, LEE H, LEE SM, LEE H
作者关键词:
出版物名称: CHEMICAL COMMUNICATIONS
ISSN: 1359-7345 EI 1364-548X
通讯作者地址: Sungkyunkwan Univ
被引频次: 24
DOI: 10.1039/c3cc47224h
出版年: 2014
▎ 摘 要
We introduce a facile method to prepare an n-type reduced graphene oxide field effect transistor at room temperature via a typical Benkeser reduction using lithium and ethylenediamine.
