▎ 摘　　要

A graphene/TiO2-based field effect photodetector with large photocurrent response controlled by applying back-gate voltage is proposed. The internal electric field caused by Fermi energy difference between gated graphene and TiO2 yields high photocurrent even in no direct source-drain bias, as a consequent of which, low dark current and more efficiency is obtained for the device. TiO2 nanoparticles, deposited directly on graphene layer by chemical vapor deposition method, improve the performance of photodetector by accepting photo-exited electrons from graphene.