• 文献标题:   Origin of band gaps in graphene on hexagonal boron nitride
  • 文献类型:   Article
  • 作  者:   JUNG J, DASILVA AM, MACDONALD AH, ADAM S
  • 作者关键词:  
  • 出版物名称:   NATURE COMMUNICATIONS
  • ISSN:   2041-1723
  • 通讯作者地址:   Natl Univ Singapore
  • 被引频次:   103
  • DOI:   10.1038/ncomms7308
  • 出版年:   2015

▎ 摘  要

Recent progress in preparing well-controlled two-dimensional van der Waals heterojunctions has opened up a new frontier in materials physics. Here we address the intriguing energy gaps that are sometimes observed when a graphene sheet is placed on a hexagonal boron nitride substrate, demonstrating that they are produced by an interesting interplay between structural and electronic properties, including electronic many-body exchange interactions. Our theory is able to explain the observed gap behaviour by accounting first for the structural relaxation of graphene's carbon atoms when placed on a boron nitride substrate, and then for the influence of the substrate on low-energy p-electrons located at relaxed carbon atom sites. The methods we employ can be applied to many other van der Waals heterojunctions.