▎ 摘　　要

In this research, for determining the effects of the (Gr-PVP) interfacial layer, two types of diodes (Au/n-Si and Au/(Gr-PVP)/n-Si) were performed on the same n-Si wafer with the same ohmic and rectifier contacts. Graphene-doped PVP nanocomposite film was grown on the n-Si wafer by a spin-coating method. Therefore, the basic electrical parameters of them were extracted from the I-V and Z-V-f characteristics and compared in detail. The higher values of n and lower values of BH obtained from Cheung's functions compared to TE theory were ascribed to their voltage-dependent. The frequency-dependent diffusion potential (V-D), doping-donor atoms (N-D), depletion layer width (W-D), surface potential (psi(s)), R-s, and BH values of the MPS diode were also extracted from the impedance characteristics in the frequency range of 10-10(3) kHz.