▎ 摘　　要

Low-temperature Raman studies of supported graphene are presented. A linear temperature dependence of 2D peak linewidths was observed with the coefficients of 0.036 and 0.033 cm/K for graphene on copper and glass substrates, respectively, while G peak linewidths remained unchanged throughout the whole temperature range. The different values observed for graphene on glass and copper substrates were explained in terms of the substrate effect on phonon-phonon and electron-phonon interaction properties of the material. The results of the present study can be used to consider substrate effects on phonon transport in graphene for nanoelectronic device engineering.